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| Ordering number : ENN8014 2SK3822 N-Channel Silicon MOSFET 2SK3822 Features * * * * * General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 100 20 52 208 1.65 75 150 --55 to +150 338 52 Unit V V A A W W C C mJ A Note : *1 VDD=20V, L=200H, IAV=52A *2 L200H, single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=100V, VGS=0 VGS= 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=26A ID=26A, VGS=10V ID=26A, VGS=4V Ratings min 100 1 10 1.2 24 40 19 23 25 32 2.6 typ max Unit V A A V S m m Marking : K3822 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2404QA TS IM TB-00000330 No.8014-1/4 2SK3822 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=50V, VGS=10V, ID=52A VDS=50V, VGS=10V, ID=52A VDS=50V, VGS=10V, ID=52A IS=52A, VGS=0 Ratings min typ 6250 440 380 45 135 480 180 117 20 25.8 1.06 1.5 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm 2093A 0.9 Package Dimensions unit : mm 2090A 4.5 1.3 10.2 4.5 10.2 0.8 1.3 11.5 8.8 9.9 1.5max 8.8 1.6 20.9 1.2 3.0 11.0 9.4 0.8 0.4 1 2 3 2.7 2.55 1.2 2.55 1.35 1 0.8 2 3 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.55 2.55 2.55 2.55 Switching Time Test Circuit VIN 10V 0V VIN ID=26A RL=1.92 VDD=50V Unclamped Inductive Test Circuit 50 RG 2.7 1.4 L DUT D PW=10s D.C.1% VOUT G 15V 0V 50 VDD 2SK3822 P.G 50 S No.8014-2/4 2SK3822 70 ID -- VDS 8V 6V Tc=25C 4V 70 ID -- VGS Tc= -2 25C 5C 5 C 1.0 1.5 2.0 2.5 3.0 60 60 Drain Current, ID -- A 10V 50 Drain Current, ID -- A 50 40 40 30 30 20 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VGS=3V 10 0 3.5 4.0 0 0.5 25 C --25 C Tc= 7 3.5 4.0 75 C 4.5 IT07876 150 IT07878 1.5 IT07880 30 IT07882 VDS=10V Drain-to-Source Voltage, VDS -- V 50 IT07875 60 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc ID=26A Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 45 40 35 30 25 20 15 10 5 2 3 4 5 6 7 8 9 10 IT07877 50 40 Tc=75C 30 26 I D= VG A, 4V S= 25C --25C 20 26 I D= VG A, 10 S= V 10 0 --50 --25 0 25 50 75 100 125 Gate-to-Source Voltage, VGS -- V 100 yfs -- ID Case Temperature, Tc -- C 100 7 5 3 2 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 7 5 VDS=10V Forward Current, IF -- A 3 2 10 7 5 3 2 1.0 7 5 0.1 25 C = Tc 5C --2 C 75 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.3 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 1000 7 5 7 100 IT07879 10000 Tc=75 C 25C --25C 0.6 0.9 1.2 SW Time -- ID td(off) Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD=50V VGS=10V Ciss, Coss, Crss -- pF 7 5 3 2 Ciss Switching Time, SW Time -- ns 5 3 2 tf 1000 7 5 100 7 5 3 0.1 tr Coss Crss td(on) 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 3 2 0 5 10 15 20 25 Drain Current, ID -- A IT07881 Drain-to-Source Voltage, VDS -- V No.8014-3/4 2SK3822 10 9 VGS -- Qg VDS=50V ID=52A Drain Current, ID -- A 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=208A Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 IT07883 10 ID=52A DC 10 s Operation in this area is limited by RDS(on). s 10 m 0m s op s era tio n 10 1m 0 s 0.1 0.1 Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC 2.0 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 90 80 75 70 60 50 40 30 20 10 0 5 7 100 2 IT07884 PD -- Tc Allowable Power Dissipation, PD -- W 1.65 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT07811 Case Temperature, Tc -- C IT07844 Note on usage : Since the 2SK3822 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice. PS No.8014-4/4 |
Price & Availability of 2SK3822
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